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IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 1 1mx18, 512kx36 18mb ddr-ii (burst 4) cio synchronous sram features ? 512kx36 and 1mx18 configuration available. ? on-chip delay-locked loop (dll) for wide data valid window. ? common i/o read and write ports. ? synchronous pipeline read with late write operation. ? double data rate (ddr) interface for read and write input ports. ? fixed 4-bit burst for read and write operations. ? clock stop support. ? two input clocks (k and k#) for address and control registering at rising edges only. ? two input clocks (c and c#) for data output control. ? two echo clocks (cq and cq#) that are delivered simultaneously with data. ? +1.8v core power supply and 1.5v to1.8v vddq, used with 0.75v to 0.9v vref. ? hstl input and output interface. ? registered addresses, write and read controls, byte writes, data in, and data outputs. ? full data coherency. ? boundary scan using limi ted set of jtag 1149.1 functions. ? byte write capability. ? fine ball grid array (fbga) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array ? programmable impedance ou tput drivers via 5x user-supplied precision resistor. description the 18mb is61ddb451236a and IS61DDB41M18A are synchronous, high-performance cmos static random access memory (sram) devices. these srams have a common i/o bus. the rising edge of k clock initiates the read/write operation, and all internal operat ions are self-timed. refer to the timing reference diagram for truth table for a description of the basic operati ons of these ddr-ii (burst of 4) cio srams. read and write addresses are registered on alternating rising edges of the k clock. reads and writes are performed in double data rate. the following are registered internally on the rising edge of the k clock: ? read/write address ? read enable ? write enable ? byte writes for burst addresses first and third ? data-in for burst addresses first and third the following are registered on the rising edge of the k# clock: ? byte writes for burst addresses second and fourth ? data-in for burst addresses second and fourth byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. an internal write buffer enables the data-ins to be registered one cycle after the write address. the first data- in burst is clocked one cycle later than the write command signal, and the second burst is timed to the following rising edge of the k# clock. two full clock cycles are required to complete a write operation. during the burst read operation, the data-outs from the first and third bursts are updated from output registers of the second and third rising edges of the c# clock (starting on and half cycles later after read command). the data-outs from the second and fourth bursts ar e updated with the third and fourth rising edges of the c clock. the k and k# clocks are used to time the data-outs whenever the c and c# clocks are tied high. two full clock cycles are required to complete a read operation. the device is operated with a single +1.8v power supply and is compatible with hstl i/o interfaces. copyright ? 2012 integrated silicon solution, inc. all rights rese rved. issi reserves the right to make changes to this specifi cation and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, produc ts or services descri bed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. integrated silicon solution, inc. does not recommend the use of any of its products in life support applications where the fail ure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect it s safety or effectiveness. prod ucts are not authorized for use in such applications unless integrated silicon solution, inc. re ceives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of integrated silicon solution, inc is adequately protected under th e circumstances advanced information july 2012
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 2 package ballout and description x36 fbga ball configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 a cq# nc/sa 1 nc/sa 1 r/w# bw 2 # k# bw 1 # ld# sa nc/sa 1 cq b nc dq27 dq18 sa bw 3 # k bw 0 # sa nc nc dq8 c nc nc dq28 v ss sa sa 0 sa 1 v ss nc dq17 dq7 d nc dq29 dq19 v ss v ss v ss vss v ss nc nc dq16 e nc nc dq20 v ddq v ss v ss vss v ddq nc dq15 dq6 f nc dq30 dq21 v ddq v dd v ss v dd v ddq nc nc dq5 g nc dq31 dq22 v ddq v dd v ss v dd v ddq nc nc dq14 h d off # v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc dq32 v ddq v dd v ss v dd v ddq nc dq13 dq4 k nc nc dq23 v ddq v dd v ss v dd v ddq nc dq12 dq3 l nc dq33 dq24 v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc dq34 v ss v ss v ss v ss v ss nc dq11 dq1 n nc dq35 dq25 v ss sa sa sa v ss nc nc dq10 p nc nc dq26 sa sa c sa sa nc dq9 dq0 r tdo tck sa sa sa c# sa sa sa tms tdi notes: 1. the following balls are reserved for higher densities: 3a for 36mb, 10a for 72mb and 2a for 144mb. x18 fbga ball configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 a cq# nc/sa 1 sa r/w# bw 1 # k# nc/sa 1 ld# sa nc/sa 1 cq b nc dq9 nc sa nc/sa 1 k bw 0 # sa nc nc dq8 c nc nc nc v ss sa sa 0 sa 1 v ss nc dq7 nc d nc nc dq10 v ss v ss v ss vss v ss nc nc nc e nc nc dq11 v ddq v ss v ss vss v ddq nc nc dq6 f nc dq12 nc v ddq v dd v ss v dd v ddq nc nc dq5 g nc nc dq13 v ddq v dd v ss v dd v ddq nc nc nc h d off # v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc nc v ddq v dd v ss v dd v ddq nc dq4 nc k nc nc dq14 v ddq v dd v ss v dd v ddq nc nc dq3 l nc dq15 nc v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc nc v ss v ss v ss v ss v ss nc dq1 nc n nc nc dq16 v ss sa sa sa v ss nc nc nc p nc nc dq17 sa sa c sa sa nc nc dq0 r tdo tck sa sa sa c# sa sa sa tms tdi notes: 1. the following balls are reserved for higher densities: 10a for 36mb, 2a for 72mb and 7a for 144mb and 5b for 288mb.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 3 ball description symbol type description k, k# input input clock: this input clock pair registers addr ess and control inputs on the rising edge of k, and registers data on the rising edge of k and the rising edge of k#. k# is ideally 180 degrees out of phase with k. all synchronous inputs must meet setup and hold times around the clock rising edges. these balls cannot remain vref level. c, c# input input clock for output data. c and c# are used to clock out the read data. they can be used together to deskew the flight times of various devices on the board back to the controller. see application example for further details. cq, cq# output synchronous echo clock outputs: the edges of these outputs are tightly matched to the synchronous data outputs and can be used as a data valid indication. these signals are free running clocks and do not stop when q tri-states. doff# input dll disable and reset input : when low, this input causes the dll to be bypassed and reset the previous dll information. when high, dll will st art operating and lock the frequency after tck lock time. the device behaves in one read latency mode when the dll is turned off. in this mode, the device can be operated at a frequency of up to 167 mhz. sa input synchronous address inputs: these inputs are regi stered and must meet the setup and hold times around the rising edge of k. these inputs are ignored when device is deselected. dq0 - dqn bidir data input and output signals. i nput data must meet setup and hold times around the rising edges of k and k# during write operations. these pins drive out the requested data when the read operation is active. valid output data is synchron ized to the respective c and c#, or to the respective k and k# if c and /c are tied to high. when read access is deselected, dq0 - dqn are automatically tri-stated. see ball configuration figures for ball site location of individual signals. the x18 device uses dq0~dq17. dq18~ dq35 should be treated as nc pin. the x36 device uses dq0~dq35. r/w# input synchronous read or write input. when ld# is low, this input designates the access type (read when it is high, write when it is low) for load ed address. r/w# must meet the setup and hold times around edge of k. ld# input synchronous load. this input is brought low when a bus cycle sequence is defined. this definition includes address and read/write direction. bw x # input synchronous byte writes: when low, these inputs cause their respective byte to be registered and written during write cycles. these signals are sampled on the same edge as the corresponding data and must meet setup and hold times around t he rising edges of k and #k for each of the two rising edges comprising the write cycle. see write truth table for signal to data relationship. v ref input reference hstl input reference voltage: nominally vddq/2 , but may be adjusted to improve system noise margin. provides a reference voltage for the hstl input buffers. v dd power power supply: 1.8 v nominal. see dc charac teristics and operating conditions for range. v ddq power power supply: isolated output buffer supply. nomina lly 1.5 v. see dc charac teristics and operating conditions for range. v ss ground ground of the device zq input output impedance matching input: this input is us ed to tune the device outputs to the system data bus impedance. dq and cq output impedance are set to 0.2xrq, where rq is a resistor from this ball to ground. this ball can be connected direct ly to vddq, which enables the minimum impedance mode. this ball cannot be connected directly to vss or left unconnected. tms, tdi, tck input ieee1149.1 input pins for jtag. tdo output ieee1149.1 ou tput pins for jtag. nc n/a no connect: these signals should be left floating or connected to ground to improve package heat dissipation.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 4 sram features description block diagram data register- burst4 control logic 17 (18) addresses : sa 4 (2) ld# r/w# bw x # clock generator k k# 512k x 36 (1m x 18) memory array write driver address decoder sense amplifiers select output control 19 (20) 36x4 (18x4) 36x4 (18x4) output select 36 (18) dq(data-out &data-in) cq, cq# (echo clocks) input/output driver c# c /d off add reg & burst control 144 (72) output reg 36 (18) 36(18) 2 sa 0 ,sa 1 36x4 (18x4) note: numerical values in parentheses refer to the x18 device configuration. read operations the sram operates continuously in a burst-of-four mode. re ad cycles are started by regi stering r/w# in active high state at the rising edge of the k clock. r/w# can be activated every other cycle because two full cycles are required to complete the burst-of-four read in ddr mode. a second set of clocks, c and c#, are used to control the timing to the outputs. a set of free-running echo clocks, cq and cq#, are prod uced internally with timings identical to the data-outs. the echo clocks can be used as data capt ure clocks by the receiver device. when the c and c# clocks are connected high, the k and k# cl ocks assume the function of those clocks. in this case, the data corresponding to the first address is clocked one and hal f cycles later by the rising edge of the k# clock. the data corresponding to the second burst is cl ocked two cycles later by the following rising edge of the k clock. the third data-out is clocked by the subsequent rising edge of t he k# clock, and the fourth data-out is clocked by the subsequent rising edge of the k clock. whenever ld# is low, a new address is registered at the ri sing edge of the k clock. a nop operation (ld# is high) does not terminate the previous read. the output drivers disable automatically to a high state. write operations write operations can also be initiated at every other ri sing edge of the k clock whenever r/w# is low. the write address is also registered at that ti me. when the address needs to change, ld# needs to be low simultaneously to be registered by the rising edge of k. again, the write always occurs in bursts of four.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 5 the write data is provided in a ?late write? mode; that is, t he data-in corresponding to the first address of the burst, is presented one cycle later or at the rising edge of the followi ng k clock. the data-in corr esponding to the second write burst address follows next, registered by the rising edge of k#. the third data-out is clocked by the subsequent rising edge of the k clock, and the fourth data-out is clocke d by the subsequent rising edge of the k# clock. the data-in provided for writing is initially kept in write buffe rs. the information on these buffers is written into the array on the third write cycle. a read cycle to the last two write address produces data from the write buffers. the sram maintains data coherency. during a write, the byte writes independ ently control which byte of any of the four burst addresses is written (see x18/x36 write truth tables and timing reference diagram for truth table ). whenever a write is disabled (r/w# is high at the ri sing edge of k), data is not written into the memory. rq programmable impedance an external resistor, rq, must be connec ted between the zq pin on the sram and v ss to enable the sram to adjust its output driver impedance. the value of rq must be 5x the value of the intended line impedance driven by the sram. for example, an rq of 250 ? results in a driver impedance of 50 ? . the allowable range of rq to guarantee impedance matching is between 175 ? and 350 ? at v ddq =1.5v. the rq resistor should be placed less than two inches away from the zq ball on the sram module. the capacitance of the loaded zq trace must be less than 7.5pf. the zq pin can also be directly connected to v ddq to obtain a minimum impedance setting. zq should not be connected to v ss . programmable impedance and power-up requirements periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in supply voltage and temperature. during power-up, the driver impedance is in the middle of allowable impedances values. the final impedance value is achieved within 1024clock cycles. clock consideration this device uses an internal dll for maximum output data valid window. it can be placed in a stopped-clock mode to minimize power and requires only 1024 cycles to restart. no clocks can be issued until v dd reaches its allowable operating range. single clock mode this device can be also operated in single-clock mode. in this case, c and c# are both connected high at power-up and must never change. under this condition, k and k# cont rol the output timings. either clock pair must have both polarities switching and must never connect to v ref , as they are not differential clocks. delay locked loop (dll) delay lock loop (dll) is a new system to align the output data coincident with clock rising or falling edge to enhance the output valid timing characteristics. it is locked to the clock frequency and is constantly adjusted to match the clock frequency. therefore device can have stable outpu t over the temperature and voltage variation. dll has a limitation of locking range and jitter adjustment whic h are specified as tkhkh and tkcvar respectively in the ac timing characteristics. in order to tu rn this feature off, applying logic low to the doff# pin will bypass this. in the dll off mode, the device behaves with one cycle latency and a l onger access time which is known in ddr-i or legacy quad mode. the dll can also be reset without power down by toggling do ff# pin low to high or stopping the input clocks k and k# for a minimum of 30ns.(k and k# must be stayed either at high er than vih or lower than vil level. remaining vref is not permitted.) dll reset must be issued when power up or when clock frequency changes abruptly. after dll being reset, it gets locked after 2048 cycles of stable clock.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 6 power-up and power-down sequences the recommendation of voltage apply sequence is : v dd v ddq 1) v ref 2) v in notes: v ddq can be applied concurrently with v dd . v ref can be applied concurrently with v ddq . after power and clock signals are stabili zed, device can be ready for normal oper ation after tkc-lock cycles. in tkc- lock cycle period, device initializes internal logics and locks dll. depending on /doff status, locking dll will be skipped. the following timing pictures are pos sible examples of power up sequence. sequence1. /doff is fixed low after tkc-lock cycle of stable clock, device is ready for normal operation. power on stage unstable clock period stable clock period read to use k k# vdd vddq vref vin note) all inputs including clocks must be either logically high or low during power on stage. timing above shows only one of ca ses. sequence2. /doff is controlled and goes high after clock being stable. power on stage unstable clock period stable clock period read to use k k # doff# vdd vddq vref vin note) all inputs including clocks must be either logically high or low during power on stage. timing above shows only one of ca ses. >tkc-lock for device initialization >tkc-lock for device initialization
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 7 sequence3. /doff is controlled but goes high before clock being stable. because dll has a risk to be locked with the unstable cl ock, dll needs to be reset and locked with the stable input. a) k-stop to reset. if k or k# stays at vih or vil for mo re than 30ns, dll will be reset and ready to re-lock. in tkc- lock period, dll will be locked with a new stable value. device can be ready for normal operation after that. power on stage unstable clock period k-stop stable clock period read to use k k# doff# vdd vddq vref vin note) all inputs including clocks must be either logically high or low during power on stage. timing above shows only one of ca ses. a) /doff low to reset. if /doff toggled low to high, dll will be reset and ready to re-lock. in tkc-lock period, dll will be locked with a new stable value. device can be ready for normal operation after that. power on stage unstable clock period doff reset dll stable clock period read to use k k # doff# vdd vddq vref vin note) applying dll reset sequences (sequence 3a, 3b) are also required when operating frequency is changed without power off. note) all inputs including clocks must be either logically high or low during power on stage. timing above shows only one of ca ses. >30ns >tkc-lock for device initialization >tdofflowtoreset >tkc-lock for device initialization
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 8 application example the following figure depicts an implementation of four 2m x 18 ddr-ii srams with common i/os. in this application example, the second pair of c and c# clocks is delayed such that the return data meets the data setup and hold times at the bus master. sram #1 sa r/w# ld# bw x # k/k# c/c# dq cq/cq# zq rq = 250 ? sram #4 zq rq = 250 ? data-in&data out address sram #1 cq input sram #4 cq input read&write control new address control byte write control source clk return clk memory controller v t v t r r = 50 ? r v t = v ref sa r/w# ld# bw x # k/k# c/c# dq cq/cq# v t r
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 9 state diagram power-up nop load new read address d count = 0 ddr-ii read d count = d count +1 ddr-ii write d count = d count +1 increment read address increment write address load load load read write read d count = 1 write d count = 1 always always /load d count = 2 /load d count = 2 /load notes: 1. internal burst counter is fixed as four-bit linear; that is w hen first address is a0+0, next in ternal burst addresses are a0+1, a0+2, and a0+3 2. read refers to read active status with r/w# = high. 3. write refers to write active status with r/w# = low. 4. load refers to read new address active status with ld# = low. 5. load is read new address inactive status with ld = high. linear burst sequence table burst sequence case1 case2 case3 case4 sa 1 sa 0 sa 1 sa 0 sa 1 sa 0 sa 1 sa 0 first address 0 0 0 1 1 0 1 1 second address 0 1 1 0 1 1 0 0 third address 1 0 1 1 0 0 0 1 fourth address 1 1 0 0 0 1 1 0
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 10 timing reference diagram for truth table the timing reference diagram for truth table is helpful in understanding the clock and write truth tables , as it shows the cycle relationship between cl ocks, address, data in, data out, and co ntrol signals. read command is issued at the beginning of cycle ?t?. write command is issued at the beginning of cycle ?t+1?. db db+1 db+2 db+3 qa qa+1 qa+2 qa+3 t + 1 t t + 2 t + 3 t + 4 t + 5 a b cycle k clock k# clock ld# r/w# bw x # address data- in/out(dq) cq cq# c clock c# clock tchqv tchqx clock truth table (use the following table with the timing reference diagram for truth table .) mode clock controls data out / data in k ld# r/w# d b d b+1 d b+2 d b+3 stop clock stop x x previous state previous state previous state previous state no operation (nop) l h h x high-z high-z high-z high-z read a l h l h d out at c# (t+1.5) d out at c (t+2.0) d out at c# (t+2.5) d out at c (t+3.0) write b l h l l d in at k (t+4.0) d in at k# (t+4.5) d in at k (t+5.0) d in at k# (t+5.5) notes: 1. x = ?don?t care?; h = logic ?1?; l = logic ?0?. 2. a read operation is started when c ontrol signal r/w# is active high. 3. a write operation is started when control signal r/w# is active low. 4. before entering into stop clock, all pending read and write commands must be completed. 5. for timing definitions, refer to the ac timing characteristics table. signals must meet ac specifications at timings indicated in parenthesis with respect to switching clocks k,k#,c, and c#.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 11 x18 write truth table (use the following table with the timing reference diagram for truth table .) operation k (t+1.0) k (t+1.5) k (t+2.0) k (t+2.5) bw 0 bw 1 d b d b+1 d b+2 d b+3 write byte 0 l h l h d0-8 (t+4.0) write byte 1 l h h l d9-17 (t+4.0) write all bytes l h l l d0-17 (t+4.0) abort write l h h h don't care write byte 0 l h l h d0-8 (t+4.5) write byte 1 l h h l d9-17 (t+4.5) write all bytes l h l l d0-17 (t+4.5) abort write l h h h don't care write byte 0 l h l h d0-8 (t+5.0) write byte 1 l h h l d9-17 (t+5.0) write all bytes l h l l d0-17 (t+5.0) abort write l h h h don't care write byte 0 l h l h d0-8 (t+5.5) write byte 1 l h h l d9-17 (t+5.5) write all bytes l h l l d0-17 (t+5.5) abort write l h h h don't care notes: 1. for all cases, r/w# needs to be active low during the rising edge of k occurring at time t. 2. for timing definitions refer to the ac timing characteristics table. signals must meet ac specificati ons with respect to switching clocks k and k#.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 12 x36 write truth table (use the following table with the timing reference diagram for truth table .) operation k (t+1.0) k (t+1.5) k (t+2.0) k (t+2.5) bw 0 bw 1 bw 2 bw 3 d b d b+1 d b+2 d b+3 write byte 0 l h l h h h d0-8 (t+4.0) write byte 1 l h h l h h d9-17 (t+4.0) write byte 2 l h h h l h d18-26 (t+4.0) write byte 3 l h h h h l d27-35 (t+4.0) write all bytes l h l l l l d0-35 (t+4.0) abort write l h h h h h don't care write byte 0 l h l h h h d0-8 (t+4.5) write byte 1 l h h l h h d9-17 (t+4.5) write byte 2 l h h h l h d18-26 (t+4.5) write byte 3 l h h h h l d27-35 (t+4.5) write all bytes l h l l l l d0-35 (t+4.5) abort write l h h h h h don't care write byte 0 l h l h h h d0-8 (t+5.0) write byte 1 l h h l h h d9-17 (t+5.0) write byte 2 l h h h l h d18-26 (t+5.0) write byte 3 l h h h h l d27-35 (t+5.0) write all bytes l h l l l l d0-35 (t+5.0) abort write l h h h h h don't care write byte 0 l h l h h h d0-8 (t+5.5) write byte 1 l h h l h h d9-17 (t+5.5) write byte 2 l h h h l h d18-26 (t+5.5) write byte 3 l h h h h l d27-35 (t+5.5) write all bytes l h l l l l d0-35 (t+5.5) abort write l h h h h h don't care notes: 1. for all cases, r/w# needs to be active low during the rising edge of k occurring at time t. 2. for timing definitions refer to the ac timing characteristics table. signals must meet ac specificati ons with respect to switching clocks k and k#.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 13 electrical specifications absolute maximum ratings parameter symbol min max units power supply voltage v dd ? 0.5 2.9 v i/o power supply voltage v ddq ? 0.5 2.9 v dc input voltage v in ? 0.5 v dd +0.3 v data out voltage v dout ? 0.5 2.6 v junction temperature t j - 110 c storage temperature t stg ? 55 +125 c note: stresses greater than those listed in this table can cause perm anent damage to the device. this is a stress rating only and fun ctional operation of the device at these or any other conditions above those indicated in the operational se ctions of this datasheet is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. operating temperature range temperature range symbol min max units commercial t a 0 +70 c industrial t a ? 40 +85 c dc electrical characteristics (over the operating temperature range, v dd =1.8v5% ) parameter symbol min max units notes x36 average power supply operating current (i out =0, v in =v ih or v il ) i dd30 i dd33 i dd40 ? 650 600 550 ma 1,2 x18 average power supply operating current (i out =0, v in =v ih or v il ) i dd30 i dd33 i dd40 ? 600 550 500 ma 1,2 power supply standby current (r=v ih , w=v ih . all other inputs=v ih or v il , i ih =0) i sb30 i sb33 i sb40 ? 290 280 270 ma 1,2 input leakage current ( 0 v in v ddq for all input balls except v ref , zq, tck, tms, tdi ball) i li ? 2 +2 a 3 output leakage current (0 v out v ddq for all output balls except tdo ball; output must be disabled.) i lo ? 2 +2 a output ?high? level voltage (i oh = ? 100ua, nominal zq) v oh v ddq ? 0.2 v ddq v output ?low? level voltage (i ol = 100ua, nominal zq) v ol v ss v ss +0.2 v notes: 1. iout = chip output current. 2. the numeric suffix indicates the part operating at speed, as indicated in ac timing characteristics table (that is, i dd25 indicates 2.5ns cycle time). 3. doff# ball does not follow this spec, ili = 5ua
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 14 recommended dc operating conditions (over the operating temperature range) parameter symbol min typical max units notes supply voltage v dd 1.8?5% 1.8 1.8+5% v 1 output driver supply voltage v ddq 1.4 1.5 v dd v 1 input high voltage v ih v ref +0.1 - v ddq +0.2 v 1, 2 input low voltage v il ?0.2 - v ref ?0.1 v 1, 3 input reference voltage v ref 0.68 0.75 0.95 v 1, 5 clock signal voltage v in-clk ?0.2 - v ddq +0.2 v 1, 4 notes: 1. all voltages are referenced to v ss . all v dd , v ddq , and v ss pins must be connected. 2. v ih (max) ac = see 0vershoot and undershoot timings . 3. v il (min) ac = see 0vershoot and undershoot timings . 4. v in-clk specifies the maximum allowable dc excu rsions of each clock (k,k#,c and c#). 5. peak-to-peak ac component superimposed on vref may not exceed 5% of vref. overshoot and undershoot timings
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 15 typical ac input characteristics parameter symbol min max units notes ac input logic high v ih (ac) v ref +0.2 v 1, 2, 3, 4 ac input logic low v il (ac) v ref ?0.2 v 1, 2, 3, 4 clock input logic high v ih-clk (ac) v ref +0.2 v 1, 2, 3 clock input logic low v il-clk (ac) v ref ?0.2 v 1, 2, 3 notes: 1. the peak-to-peak ac component superimposed on v ref may not exceed 5% of the dc component of v ref . 2. performance is a function of v ih and v il levels to clock inputs. 3. see the ac input definition diagram. 4. see the ac input definition diagram. the signals should swing monotonically with no st eps rail-to-rail with input signals never ringing back past v ih (ac) and v il (ac) during the input setup and input hold window. v ih (ac) and v il (ac) are used for timing purposes only. ac input definition k# v ref k v rail v ih (ac) v ref v il (ac) v -rail setup time hold time pbga thermal characteristics parameter symbol 13x15 bga 15x17 bga units thermal resistance (junction to ambient at airflow = 1m/s) r ja 19.6 18.0 c/w thermal resistance (junction to pins) r jb 4.02 3.30 c/w thermal resistance (junction to case) r jc 4.53 4.20 c/w note: these parameters are guaranteed by design and tested by a sample basis only.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 16 pin capacitance parameter symbol test condition max units input or output capacitanc e except dq pins c in ,c o t a = 25 c, f = 1 mhz, v dd = 1.8v, v ddq = 1.5v 5 pf dq capacitance (dq0?dqx) c dq 6 pf clocks capacitance (k, k, c, c) c clk 4 pf note: these parameters are guaranteed by design and tested by a sample basis only. programmable impedance output driver dc electrical characteristics (over the operating temperature range, v dd =1.8v5%, v ddq =1.5v/1.8v ) parameter symbol min max units notes output logic high voltage v oh v ddq /2 -0.12 v ddq /2 + 0.12 v 1, 3 output logic low voltage v ol v ddq /2 -0.12 v ddq /2 + 0.12 v 2, 3 notes: 1. for 175 ? rq 350 ? : ? ? ? ? ? ? ? ? ? ? ? ? ? 5 rq 2 v | i | ddq oh 2. for 175 ? rq 350 ? : ? ? ? ? ? ? ? ? ? ? ? ? ? 5 rq 2 v | i | ddq ol 3. parameter tested with rq=250 ? and v ddq =1.5v ac test conditions (over the operating temperature range, v dd =1.8v5%, v ddq =1.5v/1.8v) parameter symbol conditions units notes output drive power supply voltage v ddq 1.5/1.8 v input logic high voltage v ih v ref +0.5 v input logic low voltage v il v ref ?0.5 v input reference voltage v ref 0.75/0.9 v input rise time t r 2.0 v/ns input fall time t f 2.0 v/ns output timing reference level v ref v clock reference level v ref v output load conditions 1, 2 notes: 1. see ac test loading. 2. parameter tested with rq=250 ? and v ddq =1.5v
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 17 ac test loading (a) unless otherwise noted, ac test loading assume this condition. (b) tchqz and tchqx1 are specified with 5pf load capaci tance and measured when transition occurs 100mv from the steady state voltage. (c)tdo
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 18 ac timing characteristics (over the operating temperature range, v dd =1.8v5%, v ddq =1.5v/1.8v) parameter symbol 30 (333mhz) 33 (300mhz) 40 (250mhz) unit notes min max min max min max clock clock cycle time (k, k#,c,c#) tkhkh 3.00 8.4 3.33 8.4 4.00 8.4 ns clock phase jitter (k, k#,c,c#) tkc var 0.3 0.3 0.3 ns 4 clock high time (k, k#,c,c#) tkhkl 0.4 0.4 0.4 cycle clock low time (k, k#,c,c#) tklkh 0.4 0.4 0.4 cycle clock to clock (k h k# h , c h c# h ) tkhk#h 1.35 1.50 1.80 ns clock to data clock (k > c, k# > c#) tkhch 0 1.35 0 1.48 0 1.8 ns 5 dll lock time (k,c) tkc lock 1024 1024 1024 cycles 5 doff low period to dll reset tdofflowtoreset 5 5 5 ns k static to dll reset tkcreset 30 30 30 ns output times c,c# high to output valid tchqv 0.45 0.45 0.45 ns 1,3 c,c# high to output hold tchqx -0.45 -0.45 -0.45 ns 1,3 c,c# high to echo clock valid tchcqv 0.45 0.45 0.45 ns 1 c,c# high to echo clock hold tchcqx -0.45 -0.45 -0.45 ns 1 cq, cq# high to output valid tcqhqv 0.30 0.30 0.30 ns 1,3 cq, cq# high to output hold tcqhqx -0.30 -0.30 -0.30 ns 1,3 c,c# high to output high-z tchqz 0.45 0.45 0.45 ns 1,3 c,c# high to output low-z tchqx1 -0.45 -0.45 -0.45 ns 1,3 setup times address valid to k rising edge tavkh 0.40 0.40 0.40 ns 2 ld#,r/l# control inputs valid to k rising edge tivkh 0.40 0.40 0.40 ns 2 bw x # control inputs valid to k rising edge tivkh2 0.30 0.30 0.30 ns 2 data-in valid to k, k# rising edge tdvkh 0.30 0.30 0.30 ns 2 hold times k rising edge to address hold tkhax 0.40 0.40 0.40 ns 2 k rising edge to ld#,r/l# control inputs hold tkhix 0.40 0.40 0.40 ns 2 k rising edge to bw x # control inputs hold tkhix2 0.30 0.30 0.30 ns 2 k, k# rising edge to data-in hold tkhdx 0.30 0.30 0.30 ns 2 notes: 1. all address inputs must meet the specified se tup and hold times for all latching clock edges. 2. during normal operation, vih, vil, trise, and tfall of inputs must be within 20% of vih, vil, trise, and tfall of clock. 3. if c, c are tied high, then k, k become the references for c, c timing parameters. 4. clock phase jitter is the variance from clock ri sing edge to the next expected clock rising edge. 5. v dd slew rate must be less than 0.1v dc per 50ns for dll lock retention. dll lock time begins once v dd and input clock are stable. 6. the data sheet parameters reflect tester guard bands and test setup variations. 7. to avoid bus contention, at a given voltage and temperature tchqx1 is bigger than tchqz. the specs as shown do not imply bus co ntention because tchqx1 is a min parameter that is worst case at totally different test conditions (0 c, 1.9v) than tchqz, which is a ma x parameter (worst case at 70 c, 1.7v) it is not possible for two srams on the same board to be at such different voltage and temperature.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 19 read, write, and nop timing diagram notes: 1. q1-0 refers to the output from address a1. q1-1 refers to the output from the next burst address following a1. 2. outputs are disabled (high impedance) one clock cycle after a nop. 3. the nop cycle is not necessary for correct device operation, however, at high clock frequencies, it might be req uired to prevent bus contention.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 20 ieee 1149.1 serial bou ndary scan of jtag these srams incorporate a serial boundary scan test access port (tap) controller in 165 fbga package. that is fully compliant with ieee standard 1149. 1-2001. the tap controller operates using standard 1.8 v interface logic levels. disabling the jtag feature these srams operate without using the jt ag feature. to disable the tap cont roller, tck must be tied low (vss) to prevent clocking of the device. tdi and tms are interna lly pulled up and may be unconnected. they may alternatively be connected to vdd through a pull up resistor. tdo must be left unconnected. upon power up, the device comes up in a reset state, which does not interf ere with the operation of the device. test access port signal list: test clock (tck) the test clock is to operate only tap controller. all i nputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input is to set commands of the tap controller and is sampled on the rising edge of tck. this pin can be left unconnected at sram operation. the pin is pulled up internally to keep logic high level. test data-in (tdi) the tdi pin is to receive serially input information into the instruction and data register s. it can be connected to the input of any of the registers. the regi ster between tdi and tdo is chosen by t he instruction that is loaded into the tap instruction register. for information on loading the in struction register (refer to the tap controller state diagram ) . tdi is internally pulled up and can be unconnected at sram. tdi is connected to the most significant bit (msb) on any register. test data-out (tdo) the tdo pin is to drive serially clock data out from t he jtag registers. the output is active, depending upon the current state of the tap state machine (refer to instruct ion codes). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 21 tap controller state and block diagram tap controller state machine test logic reset select dr run test idle 0 11 capture dr 0 1 0 0 1 0 1 1 0 shift dr exit1 dr pause dr exit2 dr 1 1 update dr 0 select ir 1 capture ir 0 1 0 0 1 0 1 shift ir exit1 ir pause ir exit2 ir 1 1 update ir 0 0 0 10 10
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 22 performing a tap reset a reset is performed by forcing tms high (vdd) for five rising edges of tck. this reset does not affect the operation of the sram and can be performed while the sram is operating. at power up, the tap is reset internally to ensure that tdo comes up in a high z state. tap registers registers are connected between the tdi and tdo pins and allow data to be scanned into and out of the sram test circuitry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck and output on the tdo pin on the falling edge of tck. instruction register this register is loaded during the upd ate-ir state of the tap controller. three-bit instructions can be serially loaded into the instruction register. at power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as described in the previous section. when the tap controller is in the capture-ir state, the two lsbs are loaded wi th a binary ?01? pattern to allow for fault isolation of the board-level serial test data path. bypass register the bypass register is a single-bit regist er that can be placed between the tdi a nd tdo balls. it is to skip certain chips without serial boundary scan. this allows data to be shift ed through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and output balls on the sram. several no connected(nc) balls are also included in the scan register to reserve ot her product options. the boundary scan register is loaded with the contents of the sram input and out put ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo balls when the controller is moved to the shift-dr state. the extest, sample/preload, and sample z instructions can be used to capture the content s of the input and output ring. each bit corresponds to one of the balls on the sram package. the msb of the regist er is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hard wired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id r egister has a vendor id code and other information tap instruction set tap instruction set is available to set eight instructions with the three bit instruction register and all combinations are listed in the tap instruction code table. three of listed in structions on this table are reserved and must not be used. instructions are loaded serially into the tap controller durin g the shift-ir state when the instruction register is placed between tdi and tdo. to execute an instruction once it is shifted in, the tap controller must be moved into the update-ir state. idcode the idcode instruction causes a vendor- specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo balls and allows the idcode to be sh ifted out of the device when the tap controller enters the shift-dr stat e. the idcode instruction is loaded in to the instruction register upon power- up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction connects the boundary scan register between the tdi and tdo pins when the tap controller is in a shift-dr state. the sample z comm and puts the output bus into a high z state until the next command is supplied during the update ir state.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 23 sample/preload sample/preload is a ieee 1149.1 basic instru ction which connects the boundary scan re gister between the tdi and tdo pins when the tap controller is in a shift-dr state.. a snapshot of data on the inputs a nd output balls is captured in the boundary scan register when the tap controller is in a shift-dr state . the user must be aware that the tap controller clock can only operate at a frequency up to 20 mhz, while t he sram clock operates significantly faster. because there is a large difference between the clock frequencies, it is pos sible that during the capture- dr state, an input or output will undergo a transition. the tap may then try to capture a signal while in transi tion. this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. to ensure that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller?s capture setup plus hold time. t he sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sam ple/ preload instruction. if th is is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck# captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap in to the shift-dr state. this places the boundary scan register between the tdi and tdo balls. preload places an initial data pattern at the latched parallel outputs of the boundary scan regi ster cells before the selection of another boundary scan test operation. the shifting of data fo r the sample and preload phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. bypass when the bypass instruction is loaded in t he instruction register and the tap is placed in a shift-dr state, the bypass register is placed between tdi and tdo. the advantage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. private do not use these instructions. they are reserved for future use and engineering mode. extest the extest instruction drives the preloaded data out thr ough the system output pins. this instruction also connects the boundary scan register for serial access between the tdi and tdo in t he shift-dr controller state. ieee standard 1149.1 mandates that the tap controller be able to put the output bus into a tri-st ate mode. the boundary scan register has a special bit located at bit #109. when this sc an cell, called the ?extest output bus tri-state,? is latched into the preload register during the update -dr state in the tap controller, it direct ly controls the stat e of the output (q- bus) pins, when the extest is entered as the current instru ction. when high, it enables the output buffers to drive the output bus. when low, this bit places the output bus into a high z condition. this bit can be set by entering the sample/preload or extest command, and then shifting the des ired bit into that cell during the shift-dr state. during update-dr, the value loaded into that shift-register cell latches into the preload register. when the extest instruction is entered, this bit directly controls the output q-bus pins. note t hat this bit is pre-set low to enable the output when the device is powered up, and also when t he tap controller is in the test-logic-reset state. jtag dc operating characteristics (over the operating temperature range, v dd =1.8v5%) parameter symbol min max units notes jtag input high voltage v ih1 1.3 v dd +0.3 v jtag input low voltage v il1 ?0.3 0.5 v jtag output high voltage v oh1 1.4 - v |i oh1 |=2ma jtag output low voltage v ol1 - 0.4 v i ol1 =2ma jtag output high voltage v oh2 1.6 - v |i oh2 |=100ua jtag output low voltage v ol2 - 0.2 v i ol2 =100ua jtag input leakage current i lijtag -100 +100 ua 0 vin vdd jtag output leakage current i lojtag -5 +5 ua 0 vout vdd notes: 1. all voltages referenced to vss (gnd); all jt ag inputs and outputs are lvttl-compatible.
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 24 jtag ac test conditions (over the operating temperature range, v dd =1.8v5%, v ddq =1.5v/1.8v) parameter symbol conditions units input pulse high level v ih1 1.3 v input pulse low level v il1 0.5 v input rise time t r1 1.0 ns input fall time t f1 1.0 ns input and output timing reference level 0.9 v jtag ac characteristics (over the operating temperature range, v dd =1.8v5%, v ddq =1.5v/1.8v) parameter symbol min max units tck cycle time t thth 50 ? ns tck high pulse width t thtl 20 ? ns tck low pulse width t tlth 20 ? ns tms setup t mvth 5 ? ns tms hold t thmx 5 ? ns tdi setup t dvth 5 ? ns tdi hold t thdx 5 ? ns capture setup t cvth 5 ? ns capture hold t thcx 5 ? ns tck low to valid data* t tlov ? 10 ns tck low to invalid data* t tlqx 0 ? ns note: see ac test loading(c) jtag timing diagram
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 25 instruction set code instruction tdo output 000 extest boundary scan register 001 idcode 32-bit identification register 010 sample-z boundary scan register 011 private do not use 100 sample(/preload) boundary scan register 101 private do not use 110 private do not use 111 bypass bypass register id register definition revision number (31:29) part configuration ( 28:12) vendor id code (11:1) start bit (0) 000 0tdef0wx01pqlbts0 00011010101 1 part configuration definition: 1. def = 001 for 18mb, 010 for 36mb, 011 for 72mb 2. wx = 11 for x36, 10 for x18 3. p = 1 for ii+(quad-p/ddr- iip), 0 for ii(quad/ddr-ii) 4. q = 1 for quad, 0 for ddr-ii 5. l = 1 for rl=2.5, 0 for rl 2.5 6. b = 1 for burst of 4, 0 for burst of 2 7. s = 1 for separate i/o, 0 for common i/o 8. t = 1 for odt option, 0 for no odt option
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 26 boundary scan exit order order pin id order pin id order pin id 1 6r 37 10d 73 2c 2 6p 38 9e 74 3e 3 6n 39 10c 75 2d 4 7p 40 11d 76 2e 5 7n 41 9c 77 1e 6 7r 42 9d 78 2f 7 8r 43 11b 79 3f 8 8p 44 11c 80 1g 9 9r 45 9b 81 1f 10 11p 46 10b 82 3g 11 10p 47 11a 83 2g 12 10n 48 10a 84 1h 13 9p 49 9a 85 1j 14 10m 50 8b 86 2j 15 11n 51 7c 87 3k 16 9m 52 6c 88 3j 17 9n 53 8a 89 2k 18 11l 54 7a 90 1k 19 11m 55 7b 91 2l 20 9l 56 6b 92 3l 21 10l 57 6a 93 1m 22 11k 58 5b 94 1l 23 10k 59 5a 95 3n 24 9j 60 4a 96 3m 25 9k 61 5c 97 1n 26 10j 62 4b 98 2m 27 11j 63 3a 99 3p 28 11h 64 2a 100 2n 29 10g 65 1a 101 2p 30 9g 66 2b 102 1p 31 11f 67 3b 103 3r 32 11g 68 1c 104 4r 33 9f 69 1b 105 4p 34 10f 70 3d 106 5p 35 11e 71 3c 107 5n 36 10e 72 1d 108 5r 109 internal notes: 1. nc pins as defined on the fbga ball assignments are read as ?don?t cares?. 2. state of internal pin (#109) is loaded via jtag
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 27 ordering information commercial range: 0c to +70c speed order part no. organization package 333 mhz is61ddb451236a-333m3 512k x36 165 fbga (15x17 mm) is61ddb451236a-333m3l 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-333m3 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-333m3l 1mx18 166 fbga (15x17 mm), lead free 300 mhz is61ddb451236a-300m3 512k x36 165 fbga (15x17 mm) is61ddb451236a-300m3l 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-300m3 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-300m3l 1mx18 165 fbga (15x17 mm), lead free 250 mhz is61ddb451236a-250m3 512k x36 165 fbga (15x17 mm) is61ddb451236a-250m3l 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-250m3 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-250m3l 1mx18 165 fbga (15x17 mm), lead free commercial range: 0c to +70c speed order part no. organization package 333 mhz is61ddb451236a-333b4 512k x36 165 fbga (13x15 mm) is61ddb451236a-333b4l 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-333b4 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-333b4l 1mx18 166 fbga (13x15 mm), lead free 300 mhz is61ddb451236a-300b4 512k x36 165 fbga (13x15 mm) is61ddb451236a-300b4l 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-300b4 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-300b4l 1mx18 165 fbga (13x15 mm), lead free 250 mhz is61ddb451236a-250b4 512k x36 165 fbga (13x15 mm) is61ddb451236a-250b4l 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-250b4 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-250b4l 1mx18 165 fbga (13x15 mm), lead free
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 28 industrial range: -40c to +85c speed order part no. organization package 333 mhz is61ddb451236a-333m3i 512kx36 165 fbga (15x17 mm) is61ddb451236a-333m3li 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-333m3i 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-333m3li 1mx18 165 fbga (15x17 mm), lead free 300 mhz is61ddb451236a-300m3i 512kx36 165 fbga (15x17 mm) is61ddb451236a-300m3li 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-300m3i 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-300m3li 1mx18 165 fbga (15x17 mm), lead free 250 mhz is61ddb451236a-250m3i 512kx36 165 fbga (15x17 mm) is61ddb451236a-250m3li 512kx36 165 fbga (15x17 mm), lead free IS61DDB41M18A-250m3i 1mx18 165 fbga (15x17 mm) IS61DDB41M18A-250m3li 1mx18 165 fbga (15x17 mm), lead free industrial range: -40c to +85c speed order part no. organization package 333 mhz is61ddb451236a-333b4i 512kx36 165 fbga (13x15 mm) is61ddb451236a-333b4li 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-333b4i 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-333b4li 1mx18 165 fbga (13x15 mm), lead free 300 mhz is61ddb451236a-300b4i 512kx36 165 fbga (13x15 mm) is61ddb451236a-300b4li 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-300b4i 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-300b4li 1mx18 165 fbga (13x15 mm), lead free 250 mhz is61ddb451236a-250b4i 512kx36 165 fbga (13x15 mm) is61ddb451236a-250b4li 512kx36 165 fbga (13x15 mm), lead free IS61DDB41M18A-250b4i 1mx18 165 fbga (13x15 mm) IS61DDB41M18A-250b4li 1mx18 165 fbga (13x15 mm), lead free
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 29 package drawing ? 15x17x1.4 bga note : 1. controlling dimension : mm package outline 12/10/2007
IS61DDB41M18A is61ddb451236a integrated silicon solution, inc.- www.issi.com rev. 00a 7/05/2012 30 package drawing ? 13x15x1.4 bga

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